Author:
Bhanu J. Udaya,Islam Mohammed Aminul,Thangadurai P.
Funder
Science and Engineering Research Board
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference62 articles.
1. 1.5 nm direct-tunneling gate oxide Si MOSFET’s;Sasaki;IEEE Trans. Electron Devices,1996
2. Progress toward 10 nm CMOS devices;Timp,1998
3. Reliability projection for ultra-thin oxides at low voltage;Stathis,1998
4. Tailoring the electrical properties of HfO2 MOS-devices by aluminum doping;Paskaleva;ACS Appl. Mater. Interfaces,2015
5. Structure and electrical properties of Al-doped HfO2 and ZrO2 films grown via atomic layer deposition on Mo electrodes;Yoo;ACS Appl. Mater. Interfaces,2014
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