Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked “N–O–N” gate dielectrics
-
Published:1999
Issue:6
Volume:17
Page:2610
-
ISSN:0734-211X
-
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
-
language:en
-
Short-container-title:J. Vac. Sci. Technol. B
Author:
Niimi H.,Lucovsky G.
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
65 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献