Divergent dielectric characteristics in cascaded high-Kgate stacks with reverse gradient bandgap structures-Reference-Cited by-同舟云学术

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Divergent dielectric characteristics in cascaded high-Kgate stacks with reverse gradient bandgap structures

Published:2016-05-26 Issue:26 Volume:49 Page:265108
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Tsai Meng-Chen,Cheng Po-Hsien,Lee Min-Hung,Lin Hsin-Chih,Chen Miin-Jang

Funder

Ministry of Science and Technology, Taiwan

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/49/i=26/a=265108/pdf

Reference29 articles.

1. Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

2. Structural and dielectric properties of crystalline and amorphous ZrO2

3. Thin TiO2 Films Prepared by Low Pressure Chemical Vapor Deposition

4. Direct tunneling leakage current and scalability of alternative gate dielectrics

5. High-K materials and metal gates for CMOS applications

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2. Fabrication of magnetically recyclable ZrO2-TiO2/CoFe2O4 hollow core/shell photocatalysts: Improving photocatalytic efficiency under sunlight irradiation;Korean Journal of Chemical Engineering;2019-04

3. Correlations between Performance of Organic Solar Cells and Film‐Depth‐Dependent Optical and Electronic Variations;Advanced Optical Materials;2019-02-28

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