Defect generation in field-effect transistors under channel-hot-electron stress
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373600
Reference43 articles.
1. Hot‐carrier instability in IGFET’s
2. Lucky-electron model of channel hot-electron injection in MOSFET'S
3. Hot-carrier-injected oxide region and hot-electron trapping as the main cause in Si nMOSFET degradation
4. The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors
5. Giant isotope effect in hot electron degradation of metal oxide silicon devices
Cited by 63 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors;Applied Physics Letters;2023-04-24
2. Effects of Interface Traps and Hydrogen on the Low-Frequency Noise of Irradiated MOS Devices;IEEE Transactions on Nuclear Science;2023
3. Modeling Hot-Electron Trapping in GaN-based HEMTs;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03
4. 3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs;IEEE Transactions on Electron Devices;2021-05
5. Study of Anomalous Hot-Carrier Degradation of NMOS Transistor with 3D-NAND Hydrogen-Rich Process;2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2021-04-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3