Study of Anomalous Hot-Carrier Degradation of NMOS Transistor with 3D-NAND Hydrogen-Rich Process-Reference-Cited by-同舟云学术

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Study of Anomalous Hot-Carrier Degradation of NMOS Transistor with 3D-NAND Hydrogen-Rich Process

Published:2021-04-08 Issue: Volume: Page:
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Container-title:2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Author:

Sun Chao,Tian Wu,Wang JianPing,Xu Wenshan,Zhong Can,Liu Guangyuan,Hu Changlong,Jiang Ning,Xue Lei

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9420829/9420830/09420842.pdf?arnumber=9420842

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel Quantitative Model for Combination Effects of Hydrogen and Process Heat on Peripheral Transistors in 3D-NAND Flash Memory;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Anomalous NMOSFET hot carrier degradation on DRAM;2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA);2021-11-24

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