Modeling Hot-Electron Trapping in GaN-based HEMTs-Reference-Cited by-同舟云学术

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Modeling Hot-Electron Trapping in GaN-based HEMTs

Published:2022-03 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Modolo Nicola¹,De Santi Carlo¹,Minetto Andrea²,Sayadi Luca²,Sicre Sebastien²,Prechtl Gerhard²,Meneghesso Gaudenzio¹,Zanoni Enrico¹,Meneghini Matteo¹

Affiliation:

1. University of Padova,Department of Information Engineering,Padova,Italy,35131

2. Infineon Technologies Austria,Villach,Austria,9500

Funder

U.S. Department of Commerce

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764414.pdf?arnumber=9764414

Reference27 articles.

1. Defect generation in field-effect transistors under channel-hot-electron stress

2. Hot-electron induced defect generation in AlGaN/GaN high electron mobility transistors;rao;Solid State Electronics,2012

3. Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

4. Hot electron effects in AlGaN/GaN HEMTs during hard-switching events

5. Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

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