Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs

Published:2021-10 Issue:10 Volume:68 Page:5003-5008
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Minetto Andrea^ORCID,Modolo Nicola^ORCID,Sayadi Luca,Koller Christian^ORCID,Ostermaier Clemens,Meneghini Matteo^ORCID,Zanoni Enrico^ORCID,Prechtl Gerhard,Sicre Sebastien,Deutschmann Bernd^ORCID,Haberlen Oliver^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9546692/09507002.pdf?arnumber=9507002

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Positive V_TH Shift in Schottky p-GaN Gate Power HEMTs: Dependence on Temperature, Bias and Gate Leakage;IEEE Transactions on Power Electronics;2024-06

2. A novel field plate with arcuate end for improving GaN HEMTs;Electronics Letters;2024-06

3. A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/ high frequency applications;Microelectronics Journal;2023-10

4. Stability, Reliability, and Robustness of GaN Power Devices: A Review;IEEE Transactions on Power Electronics;2023-07

5. GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices;Semiconductor Science and Technology;2023-04-25

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP