Optical studies of highly strained InGaAs/GaAs quantum wells grown on vicinal surfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.364162
Reference44 articles.
1. Enhanced carrier densities and device performance in piezoelectric pseudomorphic high‐electron mobility transistor structures
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3. Structure of vapor‐deposited GaxIn1−xAs crystals
4. Indium surface segregation in strained GaInAs quantum wells grown on GaAs by MBE
5. Epitaxial growth of highly strained InxGa1−xAs on GaAs(001): the role of surface diffusion length
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1. Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells;Nanoscale;2016
2. Systematic Investigation ofc-Axis Tilt in GaN and AlGaN Grown on Vicinal SiC(0001) Substrates;Japanese Journal of Applied Physics;2009-02-05
3. Resonant photonic band gap structures realized from molecular-beam-epitaxially grown InGaAs∕GaAs Bragg-spaced quantum wells;Journal of Applied Physics;2006-09-15
4. Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs(001) substrates;Physical Review B;2005-10-04
5. Carrier diffusion in InGaAs/GaAs quantum wells grown on vicinal substrates;Physica E: Low-dimensional Systems and Nanostructures;2004-07
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