Systematic Investigation ofc-Axis Tilt in GaN and AlGaN Grown on Vicinal SiC(0001) Substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference14 articles.
1. High-Power High-Temperature Heterobipolar TransistorWith Gallium Nitride Emitter
2. SiC MISFETs with MBE-grown AlN Gate Dielectric
3. Molecular‐beam epitaxy of AlN on off‐oriented SiC and demonstration of MISFET using AlN/SiC interface
4. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
5. Direct growth of GaN on off‐oriented SiC (0001) by molecular‐beam epitaxy for GaN/SiC heterojunction bipolar transistor
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