Enhanced thermal stability of high-dielectric Gd2O3 films using ZrO2 incorporation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1644047
Reference11 articles.
1. Thermal stability of Ta2O5 in metal–oxide–metal capacitor structures
2. Epitaxial growth of Y2O3 films on Si(100) without an interfacial oxide layer
3. Structure and stability of ultrathin zirconium oxide layers on Si(001)
4. Thermodynamic stability of binary oxides in contact with silicon
5. Gadolinium silicate gate dielectric films with sub-1.5 nm equivalent oxide thickness
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1. Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics;Journal of Sol-Gel Science and Technology;2017-07-17
2. Ga2O3(Gd2O3) as a Charge-Trapping Layer for Nonvolatile Memory Applications;IEEE Transactions on Nanotechnology;2013-03
3. High Performance GdTixOy Electrolyte-Insulator-Semiconductor pH Sensor and Biosensor;International Journal of Electrochemical Science;2013-01
4. Reduction of Electrical Defects in Atomic Layer Deposited HfO2 Films by Al Doping;Chemistry of Materials;2010-06-28
5. Changes in Gd2O3 films grown on Si(100) as a function of nitridation temperature and Zr incorporation;Thin Solid Films;2010-01
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