Reduction of Electrical Defects in Atomic Layer Deposited HfO2 Films by Al Doping
Author:
Affiliation:
1. Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
2. School of Physics, Korea Institute for Advanced Study, Seoul 130-722, Korea
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cm100620x
Reference51 articles.
1. Hafnium and zirconium silicates for advanced gate dielectrics
2. High dielectric constant gate oxides for metal oxide Si transistors
3. Improved electrical and material characteristics of HfTaO gate dielectrics with high crystallization temperature
4. Zirconium-Doped Hafnium Oxide High-k Dielectrics with Subnanometer Equivalent Oxide Thickness by Reactive Sputtering
5. Enhanced thermal stability of high-dielectric Gd2O3 films using ZrO2 incorporation
Cited by 63 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Reduced leakage current in atomic-layer-deposited HfO2 thin films deposited at low temperature by in-situ defect passivation;Applied Surface Science;2024-02
2. Enhancing the Tunable Sensitivity of a Near-Ultraviolet to Visible to Near-Infrared Photo Irradiance Sensor Using an Indium Tin Oxide-Aluminum Oxide-Zirconia Aluminum Oxide-Silicon;Crystals;2023-10-24
3. Improved Performance of MoS2 Negative-Capacitance Transistors by Using Hf1-x Al x O y as Gate Dielectric Plus NH3-Plasma Treatment;IEEE Transactions on Electron Devices;2023-09
4. A Physical Description of the Variability in Single‐ReRAM Devices and Hardware‐Based Neuronal Networks;Advanced Intelligent Systems;2023-08-30
5. Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO2/Al2O3;IEEE Transactions on Electron Devices;2023-02
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3