Improved electrical and material characteristics of HfTaO gate dielectrics with high crystallization temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2138813
Reference9 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity
3. High-? Gate Dielectrics
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