At the Gates: The Tantalum-Rich Phase Hf3Ta2O11 and its Commensurately Modulated Structure-Reference-Cited by-同舟云学术

At the Gates: The Tantalum-Rich Phase Hf3Ta2O11 and its Commensurately Modulated Structure

Published:2018-10-31 Issue:22 Volume:57 Page:14435-14442
ISSN:0020-1669
Container-title:Inorganic Chemistry
language:en
Short-container-title:Inorg. Chem.

Author:

Wiedemann Dennis¹^ORCID,Lüdtke Tobias¹,Palatinus Lukáš²,Willinger Elena³,Willinger Marc G.³^ORCID,Mühlbauer Martin J.⁴,Lerch Martin¹^ORCID

Affiliation:

1. Institut für Chemie, Technische Universität Berlin, 10623 Berlin, Germany

2. Institute of Physics, Czech Academy of Sciences, 18221 Prague 8, Czech Republic

3. Abteilung Anorganische Chemie, Fritz-Haber-Institut, 14195 Berlin, Germany

4. Heinz Maier-Leibnitz Zentrum (MLZ), Technische Universität München, 85747 Garching, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Inorganic Chemistry,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.inorgchem.8b02642

Reference40 articles.

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3. Baum, T. H.; Xu, C.; Paw, W.; Hendrix, B. C.; Roeder, J. F.; Wang, Z. Source Reagent Composition for CVD Formation of Zr/Hf Doped Gate Dielectric and High Dielectric Constant Metal Oxide Thin Films and Method of Using Same. US20020132048, September 19, 2002.

4. Phase equilibrium relations in the systems titania-niobia and zirconia-niobia

5. X-Ray Diffraction Study of New Hafnium Compounds

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