Room-temperature vacancy migration in crystalline Si from an ion-implanted surface layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371453
Reference13 articles.
1. Point defect injection into silicon due to low‐temperature surface modifications
2. Trap-Limited Migration of Si Self-Interstitials at Room Temperature
3. Room-temperature diffusivity of self-interstitials and vacancies in ion-implanted Si probed by in situ measurements
4. Migration and interaction of point defects at room temperature in crystalline silicon
5. Angular Distributions of (α, n) Reaction son Be and C
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