Room-temperature plasma doping without bias power for introduction of Fe, Au, Al, Ga, Sn and In into Si-Reference-Cited by-同舟云学术

Room-temperature plasma doping without bias power for introduction of Fe, Au, Al, Ga, Sn and In into Si

Published:2016-11-11 Issue:12 Volume:122 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Hou Ruixiang,Xie Ziang,Li Lei,Xie Xixi,Xu Xiaolong,Fang Xin,Tao Li,Xu Wanjing,Ma Nongnong,He Youqin,Chen Xiao,Peng Shixiang,Fu Engang,Yuan Zhigang,Qin Guogang

Funder

National Natural Science Foundation of China

National 973 Project

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-016-0477-x.pdf

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