Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency-Reference-Cited by-同舟云学术

Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency

Published:2022-01-01 Issue:1 Volume:12 Page:015005
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Zheng Haiyang¹,Sharma Vijay Kumar¹²^ORCID,Tsai Pingchieh¹,Zhang Yiping¹,Lu Shunpeng¹,Zhang Xueliang¹,Tan Swee Tiam¹³^ORCID,Demir Hilmi Volkan¹²^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, Nanyang Technological University, Singapore 639798, Singapore

2. Department of Electrical and Electronics Engineering, Department of Physics, and UNAM–Institute of Materials Science and Nanotechnology, Bilkent University, TR 06800 Ankara, Turkey

3. School of Energy and Chemical Engineering, Xiamen University Malaysia, Jalan Sunsuria, Bandar Sunsuria, 43900 Sepang, Selangor, Malaysia

Funder

LightLab AB, Sweden

NTU, Singapore

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/6.0001262

Reference22 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides

2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

3. Correlation between optical and electrical properties of Mg-doped AlN epilayers

4. InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties

5. On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure

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1. Cathodoluminescence study for ultraviolet GaN-based MQW LEDs;2023 International Conference on Energy, Materials, and Photonics (EMP);2023-08-17

2. Electron-Beam-Pumped UVC Emitters Based on an (Al,Ga)N Material System;Nanomaterials;2023-07-15