InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties
Author:
Affiliation:
1. Institute of Physics; Czech Academy of Sciences; v.v.i., Cukrovarnická 10 16200 Praha 6 Czech Republic
2. Université Lyon; Université Claude Bernard Lyon 1; CNRS; Institut Lumière Matière UMR 5306 F-69100 Villeurbanne France
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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