Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms-Reference-Cited by-同舟云学术

Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms

Published:2021-07 Issue: Volume:565 Page:126151
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Vaněk Tomáš,Hájek František,Dominec Filip,Hubáček Tomáš,Kuldová Karla,Pangrác Jiří,Košutová Tereza,Kejzlar Pavel,Bábor Petr,Lachowski Artur,Hospodková Alice

Funder

Ministry of Education Youth and Sports of the Czech Republic

Technology Centre Czech Academy of Sciences

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

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4. High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates;Young;Appl. Phys. Lett.,2013

5. Development of new scintillators for medical applications;Lecoq;Nucl Instrum Methods Phys Res Sect. A,2016

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