On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure

Published:2017-06-07 Issue:21 Volume:121 Page:214505
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hospodková A.¹^ORCID,Oswald J.¹,Zíková M.¹,Pangrác J.¹,Kuldová K.¹^ORCID,Blažek K.²,Ledoux G.³,Dujardin C.³,Nikl M.¹

Affiliation:

1. Institute of Physics ASCR, v.v.i., Cukrovarnická 10, Praha 6 162 00, Czech Republic

2. Crytur, spol. s.r.o. Palackého 175, Turnov 511 01, Czech Republic

3. Institut Lumière Matière UMR 5306, Université Lyon, Université Claude Bernard Lyon 1, CNRS, F-69100, Villeurbanne, France

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4984908

Reference31 articles.

1. Growth of compound semiconductors and high-power InGaN/AlGaN double heterostructure violet-light-emitting diodes

2. Zn and Si Co-Doped InGaN/AlGaN Double-Heterostructure Blue and Blue-Green LEDs

3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

4. PL characterization of GaN scintillator for radioluminescence-based dosimetry

5. Factors Influencing Time Resolution of Scintillators and Ways to Improve Them

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency;AIP Advances;2022-01-01

2. A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures;Journal of Crystal Growth;2020-04

3. InGaN/GaN multiple quantum well for superfast scintillation application: Photoluminescence measurements of the picosecond rise time and excitation density effect;Journal of Luminescence;2019-04

4. Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface;Journal of Crystal Growth;2019-02

5. Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties;Journal of Crystal Growth;2019-02

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3