A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures

Published:2020-04 Issue: Volume:536 Page:125579
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hospodková A.,Hájek F.,Pangrác J.,Slavická Zíková M.,Hubáček T.,Kuldová K.,Oswald J.,Vaněk T.,Vetushka A.,Čížek J.,Liedke M.O.,Butterling M.,Wagner A.

Funder

GACR

MSMT

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference26 articles.

1. P-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes;Nakamura;Jpn. J. Appl. Phys., Part,1993

2. Origin of defect-insensitive emission probability in In-containing (Al, In, Ga)N alloy semiconductors;Chichibu;Nat. Mater.,2006

3. Theoretical studies of the influence of structural inhomogeneities on the radiative recombination time in polar InGaN quantum wells;Gladysiewicz;Phys. Status Solidi A,2012

4. Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency;Hangleiter;Phys. Rev. Lett.,2005

5. Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties;Dominec;J. Cryst. Growth,2019

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms;Journal of Crystal Growth;2021-07

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP