Defects in epitaxial Ru(0001) on Al2O3(0001): Dislocations, stacking faults, and deformation twins-Reference-Cited by-同舟云学术

Defects in epitaxial Ru(0001) on Al2O3(0001): Dislocations, stacking faults, and deformation twins

Published:2020-07-28 Issue:4 Volume:128 Page:045304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Barmak Katayun¹^ORCID,Sentosun Kadir¹^ORCID,Zangiabadi Amirali¹^ORCID,Milosevic Erik²^ORCID,Gall Daniel²^ORCID,Zecevic Miroslav³^ORCID,Lebensohn Ricardo A.³^ORCID,Floro Jerrold A.⁴^ORCID

Affiliation:

1. Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USA

2. Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA

3. Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA

4. Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, USA

Funder

National Science Foundation

Air Force Office of Scientific Research

Semiconductor Research Corporation

Empire State Development's Division of Science, Technology and Innovation

Los Alamos National Laboratory

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0015188

Reference81 articles.

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2. Influence of phonon, geometry, impurity, and grain size on Copper line resistivity

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