Leakage mechanisms in InAlN based heterostructures
Author:
Funder
NSF
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4866328
Reference34 articles.
1. Power electronics on InAlN/(In)GaN: Prospect for a record performance
2. Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)
3. Fully Passivated AlInN/GaN HEMTs With $f_{\rm T}/f_{\rm MAX}$ of 205/220 GHz
4. 300-GHz InAlN/GaN HEMTs With InGaN Back Barrier
5. Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz
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2. Temperature and field dependencies of current leakage mechanisms in IrOx contacts on InAlN/GaN heterostructures;Applied Physics Letters;2023-10-09
3. Investigation of the leakage mechanism in multi-channel GaN-on-Si SBDs;Japanese Journal of Applied Physics;2023-09-01
4. Growth of ultrathin barrier InAlGaN/GaN heterostructures with superior properties using sputtered AlN/sapphire templates and optimized group-III injection rate by metalorganic chemical vapor phase deposition;Thin Solid Films;2022-07
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