Redistribution of implanted oxygen and carbon in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328073
Reference7 articles.
1. Evaluation of a cesium primary ion source on an ion microprobe mass spectrometer
2. Characterization of structural defects in annealed silicon containing oxygen
3. Concentration, Solubility, and Equilibrium Distribution Coefficient of Nitrogen and Oxygen in Semiconductor Silicon
4. A comparative study of laser and thermal annealing of boron‐implanted silicon
5. Laser annealing of diffusion‐induced imperfections in silicon
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