The influence of oxygen on the formation of donor centers in silicon layers implanted with erbium and oxygen ions-Reference-Cited by-同舟云学术

The influence of oxygen on the formation of donor centers in silicon layers implanted with erbium and oxygen ions

Published:2005-07 Issue:7 Volume:39 Page:742-747
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Aleksandrov O. V.,Zakhar’in A. O.,Sobolev N. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1992626.pdf

Reference26 articles.

1. N. A. Sobolev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 29, 1153 (1995) [Semiconductors 29, 595 (1995)].

2. J. Michel, L. V. C. Assali, M. T. Morse, and L. C. Kimerling, Semicond. Semimet. 49, 111 (1998).

3. F. Priolo, S. Coffa, G. Franzo, et al., J. Appl. Phys. 74, 4936 (1993).

4. N. A. Sobolev, A. M. Emel’yanov, Yu. A. Kudr’yavtsev, et al., Solid State Phenom. 57–58, 213 (1997).

5. V. V. Emtsev, V. V. Emtsev, Jr., D. S. Poloskin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 1192 (1999) [Semiconductors 33, 1084 (1999)].

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