Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions-Reference-Cited by-同舟云学术

Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions

Published:2019-02 Issue:2 Volume:53 Page:153-155
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Sobolev N. A.,Aleksandrov O. V.,Sakharov V. I.,Serenkov I. T.,Shek E. I.,Kalyadin A. E.,Parshin E. O.,Melesov N. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782619020222.pdf

Reference17 articles.

1. L. Pavesi, J. Phys.: Condens. Matter 15, R1169 (2003).

2. N. A. Sobolev, Semiconductors 44, 1 (2010).

3. N. A. Sobolev, A. E. Kalyadin, E. I. Shek, K. F. Shtel’makh, V. I. Vdovin, A. K. Gutakovskii, and L. I. Fedina, Phys. Status Solidi A 214, 1700317 (2017).

4. N. A. Sobolev, O. V. Alexandrov, V. V. Emtsev, M. I. Makovijchuk, A. V. Merkulov, E. O. Parshin, D. S. Poloskin, and E. I. Shek, Solid State Phenom. 47–48, 299 (1996).

5. O. V. Aleksandrov, N. A. Sobolev, E. I. Shek, and A. V. Merkulov, Semiconductors 30, 468 (1996).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative studies of the optical absorption coefficient spectra in the implanted layers in silicon with the use of nondestructive spectroscopic techniques;Metrology and Measurement Systems;2023-07-26

2. Investigations and modeling aspects of the influence of the high energy and high dose implantation on the optical and transport parameters of implanted layers in silicon;Physica B: Condensed Matter;2020-02