Investigations and modeling aspects of the influence of the high energy and high dose implantation on the optical and transport parameters of implanted layers in silicon-Reference-Cited by-同舟云学术

Investigations and modeling aspects of the influence of the high energy and high dose implantation on the optical and transport parameters of implanted layers in silicon

Published:2020-02 Issue: Volume:578 Page:411851
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Maliński M.,Chrobak Ł.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference45 articles.

1. Compensating film stress in thin silicon substrates using ion implantation;Chalifoux;Opt. Express,2019

2. Proximity gettering of silicon wafers using CH3O multielement molecular ion implantation technique;Hirose;Jpn. J. Appl. Phys.,2018

3. Damage recovery and dopant diffusion in Si and Sn ion implanted β-Ga2O3;Tadjer;ECS J. Solid State Sci. Technol.,2019

4. Characterization of the surface of silver ion-implanted silicon by optical reflectance;Stepanov;J. Appl. Spectrosc.,2017

5. Application of neutron transmutation doping method to initially p-type silicon material;Kim;Appl. Radiat. Isot.,2009

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