The effect of oxygen on segregation-induced redistribution of rare-earth elements in silicon layers amorphized by ion implantation-Reference-Cited by-同舟云学术

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The effect of oxygen on segregation-induced redistribution of rare-earth elements in silicon layers amorphized by ion implantation

Published:2006-08 Issue:8 Volume:40 Page:875-880
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Aleksandrov O. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782606080021.pdf

Reference20 articles.

1. D. Mountonnet, H. L’Haridon, P. N. Favennec, et al., Mater. Sci. Eng. B 4, 75 (1989).

2. J. S. Custer, A. Polman, and H. M. Pinxtern, J. Appl. Phys. 75, 2809 (1994).

3. J. F. Suyver, P. G. Kik, T. Kimura, et al., Nucl. Instrum. Methods Phys. Res. B 148, 497 (1999).

4. O. V. Aleksandrov, Yu. V. Nikolaev, and N. N. Sobolev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 3 (2000) [Semiconductors 34, 1 (2000)].

5. O. V. Aleksandrov, Yu. V. Nikolaev, N. N. Sobolev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 1409 (2003) [Semiconductors 37, 1363 (2003)].

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