1.54 μm photoluminescence of erbium-implanted silicon-Reference-Cited by-同舟云学术

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1.54 μm photoluminescence of erbium-implanted silicon

Published:1989-10 Issue:1-4 Volume:4 Page:75-77
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Moutonnet D.,L'Haridon H.,Favennec P.N.,Salvi M.,Gauneau M.,Arnaud D'Avitaya F.,Chroboczek J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference4 articles.

1. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy

2. Photoluminescence decay of 1.54 μm Er3+ emission in Si and III-V semiconductors

3. Behaviour of erbium implanted in InP

4. Erbium-doped GaAs light-emitting diode at 1.54 μm

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1. The effect of oxygen on segregation-induced redistribution of rare-earth elements in silicon layers amorphized by ion implantation;Semiconductors;2006-08

2. Blue-Green Light Emission from a-SiC x :H-Based Fabry–Perot Microcavities;Chinese Physics Letters;2006-01-30

3. 1.54 μm luminescence quenching of erbium‐doped hydrogeated amorphous silicon deposited by D.C. magnetron sputtering;physica status solidi (c);2004-01-19

4. Holmium redistribution upon solid-phase epitaxial crystallization of amorphized silicon layers;Semiconductors;2000-01

5. Erbium-doped hydrogenated amorphous silicon prepared by dc sputtering;Philosophical Magazine B;1999-08

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