Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3280032
Reference21 articles.
1. Improvement of Luminous Efficiency in White Light Emitting Diodes by Reducing a Forward-bias Voltage
2. Spatial and temporal luminescence dynamics in an InxGa1−xN single quantum well probed by near-field optical microscopy
3. Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy
4. Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra
5. Confocal microphotoluminescence of InGaN-based light-emitting diodes
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