Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy-Reference-Cited by-同舟云学术

Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy

Published:2003-10-27 Issue:17 Volume:83 Page:3462-3464
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kaneta Akio,Mutoh Takashi,Kawakami Yoichi,Fujita Shigeo,Marutsuki Giichi,Narukawa Yukio,Mukai Takashi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1620677

Reference12 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

3. Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures

4. Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well

5. Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In0.02Ga0.98N active layer

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