Laser-induced direct formation of C54 TiSi2 films with fine grains on c-Si substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124801
Reference14 articles.
1. High rate melt texturing of Nd1−xBa2+xCu3O7−δ type superconductors
2. Direct synthesis of TiSi2by a laser thermal self-aligned process
3. Enhanced formation of the C54 phase of TiSi2 by an interposed layer of molybdenum
4. Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/
5. Local identification and mapping of the C49 and C54 titanium phases in submicron structures by micro-Raman spectroscopy
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1. C54-TiSi2 formation using nanosecond laser annealing of A-Si/Ti/A-Si stacks;Thin Solid Films;2024-06
2. Improved Contact Resistivity and Transconductance for Sub-10 nm FinFET Technology by Laser-Induced Contact Silicide;IEEE Transactions on Nanotechnology;2021
3. Impact of nanosecond laser energy density on the C40-TiSi2 formation and C54-TiSi2 transformation temperature;Journal of Applied Physics;2020-08
4. Nanostructured TiOx film on Si substrate: room temperature formation of TiSix nanoclusters;Journal of Nanoparticle Research;2010-01-12
5. Fabrication of TiSi2 Using Microwave Hydrogen Plasma Annealing;Journal of Materials Engineering and Performance;2005-08-01
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