Direct synthesis of TiSi2by a laser thermal self-aligned process-Reference-Cited by-同舟云学术

Direct synthesis of TiSi2by a laser thermal self-aligned process

Published:1992-10-14 Issue:10 Volume:25 Page:1500-1503
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Craciun V,Craciun D,Chitica N,Mihailescu I N,Nistor L C,Popa A,Teodorescu V S,Ursu I,Kuzmichev A V,Konov V I,Prokhorov A M,Leggieri G,Luches A,Martino M

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/25/i=10/a=016/pdf

Reference15 articles.

1. Titanium silicide growth by rapid-thermal processing of Ti films deposited on lightly doped and heavily doped silicon substrates

2. Suppression of lateral Ti silicide growth by ion beam mixing and rapid thermal annealing

3. Formation of self‐aligned TiSi2 for very large scale integrated contacts and interconnects

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1. Thermal Conductivity and Interface Thermal Conductance of Titanium Silicide Films on Si;IEEE Transactions on Electron Devices;2016-01

2. Laser induced transformation of TiSi2;Journal of Applied Physics;2003-10

3. Thermal and pulsed laser induced surface reactions in Ti/Si(001) interfaces studied by spectromicroscopy with synchrotron radiation;Journal of Applied Physics;2001-11

4. Visible and UV pulsed laser processing of the Ti/Si(0 0 1) interface studied by XPS microscopy with synchrotron radiation;Surface Science;2001-06

5. Laser-induced direct formation of C54 TiSi2 films with fine grains on c-Si substrates;Applied Physics Letters;1999-09-20