Observations of the influence of threading dislocations on the recombination enhanced partial dislocation glide in 4H-silicon carbide epitaxial layers-Reference-Cited by-同舟云学术

Observations of the influence of threading dislocations on the recombination enhanced partial dislocation glide in 4H-silicon carbide epitaxial layers

Published:2007-04-23 Issue:17 Volume:90 Page:171930
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Y.,Dudley M.,Liu K. X.,Stahlbush R. E.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2734499

Reference12 articles.

1. Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias

2. Core structure and properties of partial dislocations in silicon carbide p-i-n diodes

3. Stacking-fault formation and propagation in 4H-SiC PiN diodes

4. Recombination-enhanced defect motion in forward-biased 4H–SiC p-n diodes

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