Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3595940
Reference25 articles.
1. Low temperature surface passivation for silicon solar cells
2. Carrier recombination at silicon–silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition
3. Recombination at the interface between silicon and stoichiometric plasma silicon nitride
4. Influence of stoichiometry of direct plasma-enhanced chemical vapor deposited SiNx films and silicon substrate surface roughness on surface passivation
5. Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells
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