High-performance ZnO nanowire field-effect transistor with forming gas treated SiO2 gate dielectrics
Author:
Affiliation:
1. Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
Funder
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4919220
Reference25 articles.
1. Electrically pumped random lasing from FTO/porous insulator/n-ZnO/p^+-Si devices
2. Depletion-mode ZnO nanowire field-effect transistor
3. Top-Gate ZnO Nanowire Transistors and Integrated Circuits with Ultrathin Self-Assembled Monolayer Gate Dielectric
4. Low Operating Voltage Single ZnO Nanowire Field-Effect Transistors Enabled by Self-Assembled Organic Gate Nanodielectrics
5. Low frequency noise characterizations of ZnO nanowire field effect transistors
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