High-mobility In and Ga co-doped ZnO nanowires for high-performance transistors and ultraviolet photodetectors-Reference-Cited by-同舟云学术

High-mobility In and Ga co-doped ZnO nanowires for high-performance transistors and ultraviolet photodetectors

Published:2020 Issue:30 Volume:12 Page:16153-16161
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Li Fangzhou¹²³⁴⁵,Meng You¹²³⁴^ORCID,Kang Xiaolin¹²³⁴,Yip SenPo¹²³⁴⁵,Bu Xiuming¹²³⁴⁵,Zhang Heng¹²³⁴⁵,Ho Johnny C.¹²³⁴⁵^ORCID

Affiliation:

1. Department of Materials Science and Engineering

2. City University of Hong Kong

3. Kowloon 999077

4. Hong Kong SAR

5. Shenzhen Research Institute

Abstract

In and Ga co-doping does not only enhance the carrier concentration but also suppresses the formation of oxygen vacancy defects within ZnO nanowires, enabling high-performance transistors and ultraviolet photodetectors.

Funder

National Natural Science Foundation of China

Science, Technology and Innovation Commission of Shenzhen Municipality

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR03740K

Reference65 articles.

1. Tunable Electronic Transport Characteristics of Surface-Architecture-Controlled ZnO Nanowire Field Effect Transistors

2. ZnO Nanowire UV Photodetectors with High Internal Gain

3. Effects of Seed Layer on Growth of ZnO Nanorod and Performance of Perovskite Solar Cell

4. Zinc Oxide Nanostructures for NO2 Gas–Sensor Applications: A Review

5. Ultralow Self-Doping in Two-dimensional Hybrid Perovskite Single Crystals

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