Solution‐Processed High‐Performance ZnO Nano‐FETs Fabricated with Direct‐Write Electron‐Beam‐Lithography‐Based Top‐Down Route-Reference-Cited by-同舟云学术

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Solution‐Processed High‐Performance ZnO Nano‐FETs Fabricated with Direct‐Write Electron‐Beam‐Lithography‐Based Top‐Down Route

Published:2021-01-25 Issue:3 Volume:7 Page:2000978
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Tiwale Nikhil¹^ORCID,Senanayak Satyaprasad P.²^ORCID,Rubio‐Lara Juan¹^ORCID,Prasad Abhinav³,Aziz Atif¹,Alaverdyan Yury⁴,Welland Mark E.¹

Affiliation:

1. Nanoscience Centre Department of Engineering University of Cambridge Cambridge CB30FF UK

2. School of Physical Sciences National Institute of Science Education and Research HBNI Jatni 752050 India

3. Institute for Gravitational Research School of Physics and Astronomy University of Glasgow Glasgow G128QQ UK

4. Cambridge Graphene Centre, Department of Engineering University of Cambridge Cambridge CB30FA UK

Funder

Cambridge Commonwealth, European and International Trust

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000978

Reference77 articles.

1. Solution-processable metal oxide semiconductors for thin-film transistor applications

2. Enabling thin-film transistor technologies and the device metrics that matter

3. Non-aqueous solution processed ZnO thin film transistors

4. Low-Temperature Metal-Oxide Thin-Film Transistors Formed by Directly Photopatternable and Combustible Solution Synthesis

5. Chemical durability engineering of solution-processed oxide thin films and its application in chemically-robust patterned oxide thin-film transistors

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4. Enhancement of Broadband Zno Nanorods Photosensing Capability by Incorporating Nanoimprinted Grating Nanostructures;2024

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