Plasma-enhanced chemical vapor deposition of amorphous Si on graphene
Author:
Affiliation:
1. IHP, Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
2. Institut für Halbleiter- und Mikrosystemtechnik, Technische Universität Dresden, 01062 Dresden, Germany
Funder
European Commission (EC)
Deutsche Forschungsgemeinschaft (DFG)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4948978
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1. Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
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4. Nucleation and growth of HfO2 layers on graphene by chemical vapor deposition
5. Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric
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