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Going ballistic: Graphene hot electron transistors

Published:2015-12 Issue: Volume:224 Page:64-75
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Vaziri S.,Smith A.D.,Östling M.,Lupina G.,Dabrowski J.,Lippert G.,Mehr W.,Driussi F.,Venica S.,Di Lecce V.,Gnudi A.,König M.,Ruhl G.,Belete M.,Lemme M.C.

Funder

European Commission

ERC

German Research Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference49 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional atomic crystals

3. Electronics based on two-dimensional materials

4. Two-dimensional materials for electronic applications

5. Two-dimensional material nanophotonics

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1. Effects of Group IVA Elements on the Electrical Response of a Ge2Se3-Based Optically Gated Transistor;Micromachines;2024-08-01

2. Going ballistic: a novel characterization for the electronic energy gap;PHYS CHEM CHEM PHYS;2023

3. GaN/Gr (2D)/Si (3D) Combined High-Performance Hot Electron Transistors;ACS Nano;2023-05-01

4. Dual-mode frequency multiplier in graphene-base hot electron transistor;Nanoscale;2023

5. Going ballistic: a novel characterization for the electronic energy gap;Physical Chemistry Chemical Physics;2023

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