Novel Graphene Adjustable-Barrier Transistor with Ultra-High Current Gain-Reference-Cited by-同舟云学术

Novel Graphene Adjustable-Barrier Transistor with Ultra-High Current Gain

Published:2022-08-22 Issue:34 Volume:14 Page:39249-39254
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Strobel Carsten¹^ORCID,Chavarin Carlos A.²^ORCID,Richter Karola¹,Knaut Martin¹^ORCID,Reif Johanna¹,Völkel Sandra¹,Jahn Andreas¹,Albert Matthias¹,Wenger Christian²³^ORCID,Kirchner Robert⁴,Bartha Johann W.¹,Mikolajick Thomas¹^ORCID

Affiliation:

1. Institute of Semiconductors and Microsystems, Chair of Nanoelectronics, Technische Universität Dresden, Nöthnitzer Straße 64, 01187 Dresden, Germany

2. IHP-Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt, Oder, Germany

3. BTU Cottbus-Senftenberg, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany

4. Center for Advancing Electronics, Technische Universität Dresden, Helmholtzstr. 18, 01069 Dresden, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c10634

Reference25 articles.

1. Meric, I.; Baklitskaya, N.; Kim, P.; Shepard, K. L. RF Performance of Top-Gated, Zero-Bandgap Graphene Field-Effect Transistors. 2008 IEEE International Electron Devices Meeting, 2008; pp 1–4.

2. High-frequency self-aligned graphene transistors with transferred gate stacks

3. Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

4. Noh, J.; Chang, K. E.; Shim, C. H.; Kim, S.; Lee, B. H. Performance Prospect of Graphene Barristor with High On-off Ratio (∼107). 2014 Silicon Nanoelectronics Workshop (SNW), 2014; pp 1–2.

5. A graphene barristor using nitrogen profile controlled ZnO Schottky contacts

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