Growth and characteristics of low dislocation density GaN grown on Si(111) from a single process
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2158487
Reference17 articles.
1. Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers andin situSixNy masking
2. Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition
3. Microstructure of GaN layers grown on Si(111) revealed by TEM
4. High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer
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1. A review on GaN-based two-terminal devices grown on Si substrates;Journal of Alloys and Compounds;2021-07
2. Embedded void approach effects on intrinsic stresses in laterally grown GaN-on-Si substrate;Materials Science and Engineering: B;2019-03
3. AlGaN/GaN high-electron-mobility transistor with distributed gate grown on stripe-patterned Si(111) substrate;Japanese Journal of Applied Physics;2015-12-03
4. Performance improvement of GaN-based HEMT grown on silicon (111) substrate by inserting low temperature AlN layer;Applied Surface Science;2015-11
5. Growth and characterization of semi-polar (11-22) GaN on patterned (113) Si substrates;Semiconductor Science and Technology;2015-05-18
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