Microstructure of GaN layers grown on Si(111) revealed by TEM
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
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1. Exploration of Physicochemical Mechanism for Negative Bias Temperature Instability in GaN‐HEMTs by Extracting Activation Energy of Dislocations;Advanced Materials Interfaces;2022-07-28
2. Interfacial Tailoring for the Suppression of Impurities in GaN by In Situ Plasma Pretreatment via Atomic Layer Deposition;ACS Applied Materials & Interfaces;2019-09-04
3. Temperature effect on Al predose and AlN nucleation affecting the buffer layer performance for the GaN-on-Si based high-voltage devices;Japanese Journal of Applied Physics;2019-05-09
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5. Prospects of III-nitride optoelectronics grown on Si;Reports on Progress in Physics;2013-10-01
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