Mechanism of TMAl pre-seeding in AlN epitaxy on Si (111) substrate-Reference-Cited by-同舟云学术

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Mechanism of TMAl pre-seeding in AlN epitaxy on Si (111) substrate

Published:2014-03 Issue: Volume:101 Page:184-188
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Bao Qilong,Luo Jun,Zhao Chao

Funder

Institute of Microelectronics, Chinese Academy of Sciences

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference28 articles.

1. AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility

2. AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

3. Spie photonic west: gallium nitride materials and devices VII, San Francisco, California, USA;Kim,2012

4. Laser ablated ZnO layers for ALGaN/GaN HEMT passivation

5. InGaN nanorings and nanodots by selective area epitaxy

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1. Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD;Applied Physics Letters;2024-04-22

2. More than 60% RF loss reduction and improved crystal quality of GaN-on-Si achieved by in-situ doping tert-butylphosphorus;Journal of Crystal Growth;2024-01

3. Effect of H Plasma Treatment of the Nucleation Layer on AlN Epitaxy in Microwave Plasma Chemical Vapor Deposition;Crystal Growth & Design;2023-03-14

4. Structural and optical properties of aluminum nitride nano powder prepared from tris (N,N dimethyl-ethylenediamine)AlCl₃ precursor;Journal of Coordination Chemistry;2023-01-02

5. Ultralow-Supersaturation Al Pretreatment toward Low Dislocation Density and Low Radio Frequency Loss GaN/AlN Epi-Stacks on High-Resistivity Si Substrates;ACS Applied Electronic Materials;2022-07-29

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