Laser ablated ZnO layers for ALGaN/GaN HEMT passivation
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference7 articles.
1. Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride;Arulkumaran;Appl Phys Lett,2004
2. Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs;Bernát;Solid State Electronics,2003
3. Low-k BCB passivation on AlGaN–GaN HEMT fabrication;Wang;IEEE Electron Dev Lett,2004
4. Novel dielectrics for gate oxides and surface passivation on GaN;Gila;Solid State Electronics,2006
5. Electrical properties of ZnO/GaN heterostructures and photoresponsivity of ZnO layers;Oh;Phys Stat Sol (c),2006
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1. Mechanism of TMAl pre-seeding in AlN epitaxy on Si (111) substrate;Vacuum;2014-03
2. Properties of sol–gel synthesized n-ZnO/n-GaN (0001) isotype heterojunction;Materials Chemistry and Physics;2014-01
3. Electronic surface and dielectric interface states on GaN and AlGaN;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-09
4. Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor;Sensors and Actuators A: Physical;2011-12
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