Low-<tex>$kappa$</tex>BCB Passivation on AlGaN–GaN HEMT Fabrication-Reference-Cited by-同舟云学术

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Low-<tex>$kappa$</tex>BCB Passivation on AlGaN–GaN HEMT Fabrication

Published:2004-12 Issue:12 Volume:25 Page:763-765
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:en
Short-container-title:IEEE Electron Device Lett.

Author:

Wang W.-K.,Lin C.-H.,Lin P.-C.,Lin C.-K.,Huang F.-H.,Chan Y.-J.,Chen G.-T.,Chyi J.-I.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/29861/01362767.pdf?arnumber=1362767

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates;Electronics;2023-02-20

2. A systematic study of device structure on DC and small‐signal characteristics of millimeter‐wave AlGaN/GaN HEMT;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2019-05-28

3. Millimeter-Wave GaN HEMTs With Cavity-Gate Structure Using MSQ-Based Inter-Layer Dielectric;IEEE Transactions on Semiconductor Manufacturing;2016-11

4. Mechanical stress investigation after technological process in Deep Trench Termination DT2 using BenzoCycloButene as dielectric material;Microelectronics Reliability;2015-08

5. Low k-dielectric benzocyclobutane encapsulated AlGaN/GaN HEMTs with Improved off-state breakdown voltage;Japanese Journal of Applied Physics;2015-02-10

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