Interfacial Tailoring for the Suppression of Impurities in GaN by In Situ Plasma Pretreatment via Atomic Layer Deposition

Author:

Liu Sanjie1ORCID,Zhao Gang2,He Yingfeng1,Wei Huiyun1,Li Yangfeng3,Qiu Peng1,Song Yimeng1,An Yunlai1,Wang Xinyi1,Wang Xixi1,Cheng Jiadong1,Peng Mingzeng1ORCID,Zheng Xinhe1

Affiliation:

1. School of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing 100083, China

2. Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China

3. Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Funder

Ministry of Education of the People's Republic of China

Natural Science Foundation of Beijing Municipality

China Postdoctoral Science Foundation

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Natural Science Foundation of China

University of Science and Technology Beijing

State Key Laboratory of Advanced Metallurgy, University of Science and Technology Beijing

Beijing Municipality

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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