A study of subbands in AlGaN/GaN high-electron-mobility transistor structures using low-temperature photoluminescence spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1485310
Reference12 articles.
1. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
2. Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates
3. High transconductance-normally-off GaN MODFETs
4. Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
5. Photoluminescence related to the two‐dimensional electron gas at a GaN/AlGaN heterointerface
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1. Observations of two-dimensional electron gases in AlGaN/GaN high-electron-mobility transistors using up-converted photoluminescence excitation;Optics Express;2024-08-21
2. Low temperature photoluminescence study for identification of intersubband energy levels inside triangular quantum well of AlGaN/GaN heterostructure;Microelectronics Journal;2023-01
3. Thermodynamic approach of AlGaN MOVPE growth at atmospheric pressure;Indian Journal of Physics;2019-02-01
4. Ultraviolet and visible micro‐Raman and micro‐photoluminescence spectroscopy investigations of stress on a 75‐mm GaN‐on‐diamond wafer;physica status solidi c;2017-02-22
5. An unambiguous identification of 2D electron gas features in the photoluminescence spectrum of AlGaN/GaN heterostructures;Journal of Physics D: Applied Physics;2016-05-26
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