Thermodynamic approach of AlGaN MOVPE growth at atmospheric pressure
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
http://link.springer.com/article/10.1007/s12648-019-01385-y/fulltext.html
Reference42 articles.
1. R M Farell, E C Young, F Wu, S P DenBaars and J S Speck Semicond. Sci. Technol. 27 024001 (2012)
2. P Vennéguès Semicond. Sci. Technol. 27 024004 (2012)
3. H K Chauveau, P De Mierry, J-M Chauveau and J-Y Duboz J. Cryst. Growth 316 30 (2011)
4. H Sun et al. Appl. Phys. Lett. 85 531 (2004)
5. Y Jung et al. J. Appl. Phys. 42 2349 (2003)
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