Electron accumulation in AlGaSb/InAs/AlGaSb quantum well system
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106909
Reference10 articles.
1. Heterojunction field‐effect transistors based on AlGaSb/InAs
2. InAs‐AlSb heterostructure field‐effect transistors fabricated using argon implantation for device isolation
3. Experimental observation of large room‐temperature current gains in a Stark effect transistor
4. Application of split-gate and dual-gate field-effect transistor designs to InAs field-effect transistors
5. Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface
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1. Studies of scattering mechanisms in gate tunable InAs/(Al,Ga)Sb two dimensional electron gases;Applied Physics Letters;2015-06
2. Atomic scale interface engineering for strain compensated epitaxially grown InAs/AlSb superlattices;Nanotechnology;2010-10-14
3. Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface;Semiconductors;2010-01
4. Measurement of the GaSb surface band bending potential from the magnetotransport characteristics of GaSb–InAs–AlSb quantum wells;Applied Physics Letters;2006-11-13
5. Unusual Persistent Photoconductivity in the InAs∕AlSb Quantum Well;Semiconductors;2005
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