Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface-Reference-Cited by-同舟云学术

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Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface

Published:2010-01 Issue:1 Volume:44 Page:66-71
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Mikhailova M. P.,Ivanov E. V.,Moiseev K. D.,Yakovlev Yu. P.,Hulicius E.,Hospodkova A.,Pangrac J.,Šimeček T.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782610010100.pdf

Reference25 articles.

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3. W. Kruppa, M. J. Yang, B. R. Bennett, and J. B. Boos, Appl. Phys. Lett. 85, 774 (2004).

4. R. E. Carnahan, M. A. Maldonado, K. P. Martin, A. Nogaret, R. J. Higgins, L. A. Cury, D. K. Maude, J. C. Portal, J. F. Chen, and A. Y. Cho, Appl. Phys. Lett. 62, 1385 (1993).

5. N. Kuze, K. Nagase, S. Muramatsu, S. Miya, T. Iwabuchi, A. Ichii, and I. Shibasaki, J. Cryst. Growth 150(pt 2), 1307 (1995).

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